IPG20N10S4L-35A – INFINEON

Part Number:

IPG20N10S4L-35A

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Dual 100 V, 20 A N‑Channel MOSFET, 22 mOhm, SSO8 Package

Datasheet:

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Product Details:

Overview

The IPG20N10S4L-35A is a dual N-Channel enhancement mode MOSFET manufactured by INFINEON. This device features a drain-source voltage of 100V and a continuous drain current of 20A. It exhibits a typical on-state resistance of 22 mOhm. The component is supplied in a SSO8 surface-mount package.

Key Features

100 V Drain-Source Voltage
20 A Continuous Drain Current
Low On-State Resistance (22 mOhm typical)
N-Channel Enhancement Mode

Applications

This dual MOSFET is suitable for various power management and switching applications where efficient power conversion is required. Its low on-resistance minimizes power losses, making it suitable for high-frequency operation.

Synchronous Rectification
DC-DC Conversion
Motor Control