IPG20N04S4L-11A – INFINEON

Part Number:

IPG20N04S4L-11A

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Dual N-Channel MOSFET, 40 V, 20 A, 10.1 mOhm

Datasheet:

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Product Details:

Overview

The IPG20N04S4L-11A is a dual N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This component is designed for power switching applications requiring efficient energy conversion. It features a low on-state resistance (Rds(on)) and is housed in a leadless SMD package for optimized thermal performance and board space utilization. The device operates at a drain-source voltage of 40V and a continuous drain current of 20A.

Key Features

40V Drain-Source Voltage (Vds)
20A Continuous Drain Current (Id)
10.1 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This dual N-Channel MOSFET is suitable for various power management and control circuits. Its characteristics make it appropriate for use in systems requiring efficient switching and low power dissipation.

DC-DC Converters
Load Switching
Power Management Circuits