IPG20N04S4L-08 – INFINEON

Part Number:

IPG20N04S4L-08

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Dual N-Channel MOSFET, 40 V, 20 A, 7.2 mOhm, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The IPG20N04S4L-08 is a dual N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This component is designed for power switching applications, providing efficient current control with a low on-state resistance. It features a drain-source voltage rating of 40V and a continuous drain current of 20A. The device is housed in a space-saving TDSON-8 surface mount package.

Key Features

40V Drain-Source Voltage (Vds)
20A Continuous Drain Current (Id)
7.2 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This dual N-Channel MOSFET is suitable for various power management and switching circuits. Its low on-resistance contributes to reduced power dissipation and improved efficiency in targeted systems.

DC-DC Converters
Load Switching
Motor Control