IPG20N10S4L-22A – INFINEON

Part Number:

IPG20N10S4L-22A

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Dual N‑Channel MOSFET, 100 V, 20 A, 22 mOhm, SON‑8 Package

Datasheet:

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Product Details:

Overview

The IPG20N10S4L-22A is a dual N-Channel enhancement mode MOSFET manufactured by INFINEON. This component is designed for power switching applications requiring efficient energy conversion. It features a drain-source voltage of 100V and a continuous drain current of 20A. The device is housed in a compact SON-8 package for optimized board space utilization.

Key Features

100V Drain-Source Voltage
20A Continuous Drain Current
22 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode
SON-8 Surface Mount Package

Applications

This dual N-Channel MOSFET is suitable for a variety of power management and control systems. Its low on-state resistance contributes to minimal power loss, making it appropriate for high-efficiency designs. The component’s compact size allows for integration into space-constrained environments.

Synchronous Rectification
DC-DC Conversion
Motor Control