IPG20N04S4-12A – INFINEON

Part Number:

IPG20N04S4-12A

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Dual 40 V, 20 A N‑Channel MOSFET, 12.2 mOhm, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The IPG20N04S4-12A is a dual N-Channel enhancement mode MOSFET manufactured by Infineon. This device features a drain-source voltage rating of 40V and a continuous drain current of 20A. It exhibits a typical on-state resistance of 12.2 mOhm. The component is supplied in a TDSON-8 surface mount package, facilitating efficient thermal management.

Key Features

40V Drain-Source Voltage
20A Continuous Drain Current
12.2 mOhm On-State Resistance
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for a variety of power switching and control applications where efficient energy conversion is required. Its low on-resistance minimizes power dissipation, making it appropriate for designs prioritizing thermal performance.

Synchronous Rectification
DC-DC Conversion
Motor Control