IPG20N06S4L-11 – INFINEON

Part Number:

IPG20N06S4L-11

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Dual N‑Channel MOSFET, 60 V, 20 A, 12.5 mOhm, TDSON‑8‑10

Datasheet:

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Product Details:

Overview

The IPG20N06S4L-11 is a dual N-Channel enhancement mode MOSFET manufactured by Infineon. This component is designed for high-efficiency switching applications. It features a voltage rating of 60V and a continuous drain current of 20A. The device is characterized by a low on-state resistance (Rds(on)) of 12.5 mOhm. This MOSFET is supplied in a TDSON-8-10 package.

Key Features

60V Drain-Source Voltage
20A Continuous Drain Current
12.5 mOhm On-State Resistance
Dual N-Channel Configuration

Applications

This dual N-Channel MOSFET is typically employed in power management circuits and switching regulators. Its characteristics make it suitable for various electronic systems requiring efficient power conversion and control.

Synchronous Rectification
DC-DC Converters
Motor Control