IPG20N04S4L-11 – INFINEON

Part Number:

IPG20N04S4L-11

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Dual MOSFET, 40 V, 20 A, 12 mOhm, SuperSO‑8 Package

Datasheet:

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Product Details:

Overview

The IPG20N04S4L-11 is a dual N-channel MOSFET manufactured by Infineon. This component features a drain-source voltage of 40V and a continuous drain current of 20A. It exhibits a low on-state resistance of 12 mOhm. The device is packaged in a SuperSO-8 surface-mount format, making it suitable for compact designs.

Key Features

40V Drain-Source Voltage
20A Continuous Drain Current
12 mOhm On-State Resistance
N-Channel Enhancement Mode

Applications

This dual MOSFET is commonly utilized in power management circuits and switching applications. Its low on-resistance contributes to efficient power conversion. The SuperSO-8 package allows for space-saving implementation in various electronic systems.

DC-DC Converters
Motor Control Circuits
Load Switching