IPB067N08N3 G – INFINEON

Part Number:

IPB067N08N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N-Channel MOSFET, 80 V, 80 A, 7 mOhm, TO‑263‑3 Package

Datasheet:

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Product Details:

Overview

The IPB067N08N3 G is an N-Channel enhancement mode MOSFET manufactured by INFINEON. This power MOSFET is designed for switching applications requiring efficient power conversion. It features a drain-source voltage of 80V and a continuous drain current of 80A. The component is housed in a TO-263-3 package, suitable for surface mount assembly.

Key Features

N-Channel Enhancement Mode
V_DS: 80V
I_D: 80A
R_DS(on): 7 mOhm (typical)

Applications

This N-Channel MOSFET is commonly employed in various power management circuits and systems. Its characteristics make it suitable for use in designs requiring efficient and controlled switching performance.

Synchronous Rectification
DC-DC Converters
Motor Control