IPB026N06N – INFINEON

Part Number:

IPB026N06N

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

60 V, 100 A N‑Channel MOSFET, 2.3 mOhm, D2PAK Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The IPB026N06N is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This component is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 60V and a continuous drain current capability of 100A. The device is housed in a D2PAK surface-mount package, facilitating automated assembly and efficient thermal management.

Key Features

N-Channel enhancement mode
Low on-state resistance (Rds(on) = 2.3 mOhm)
High current capability (ID = 100 A)
Voltage rating (VDS = 60 V)

Applications

This MOSFET is suitable for a variety of power management and switching circuits. Its low on-resistance and high current handling make it appropriate for demanding environments where power efficiency is paramount.

Synchronous rectification
DC-DC converters
Motor control