IPB011N04L G – INFINEON

Part Number:

IPB011N04L G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

40 V, 180 A N‑Channel MOSFET, 1 mOhm, TO‑263‑7 Package

Datasheet:

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Product Details:

Overview

The IPB011N04L G is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This power MOSFET is designed for switching applications requiring efficient power conversion. It features a drain-source voltage of 40V and a continuous drain current capability of 180A. The component is housed in a TO-263-7 package, suitable for surface mounting.

Key Features

40V Drain-Source Voltage (Vds)
180A Continuous Drain Current (Id)
Low On-Resistance: 1 mOhm (Rds(on))
N-Channel Enhancement Mode

Applications

This MOSFET is commonly used in circuits demanding high current handling and efficient switching. Its low on-resistance minimizes power losses, making it suitable for various power management implementations.

Synchronous Rectification
DC-DC Converters
Motor Control