IPB017N10N5 – INFINEON

Part Number:

IPB017N10N5

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N‑Channel MOSFET, 100 V, 180 A, 1.7 mOhm, TO263‑7 Package

Datasheet:

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Product Details:

Overview

The IPB017N10N5 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-efficiency switching applications. It features a drain-source voltage rating of 100V and a continuous drain current capability of 180A. The device exhibits a low on-state resistance of 1.7 mOhm, minimizing conduction losses. It is supplied in a TO263-7 package, suitable for surface mount assembly.

Key Features

N-Channel Enhancement Mode
V_DS: 100V
I_D: 180A
R_DS(on): 1.7 mΩ

Applications

This MOSFET is typically used in power management circuits and high-current switching systems. Its low on-resistance makes it suitable for applications requiring minimal power dissipation and high efficiency.

Synchronous Rectification
DC-DC Converters
Motor Control