IPB015N04N G – INFINEON

Part Number:

IPB015N04N G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N‑Channel, 40 V, 120 A, 1.5 mOhm MOSFET, TO263‑3 Package

Datasheet:

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Product Details:

Overview

The IPB015N04N G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power handling. It features a drain-source voltage rating of 40V and a continuous drain current capability of 120A. The device exhibits a low on-state resistance of 1.5 mOhm. It is supplied in a TO263-3 package, suitable for surface mounting.

Key Features

N-Channel Enhancement Mode
40V Drain-Source Voltage (Vds)
120A Continuous Drain Current (Id)
Low On-State Resistance (Rds(on) = 1.5 mOhm)

Applications

This MOSFET is commonly used in power management circuits and high-current switching systems. Its low on-resistance minimizes power losses, making it suitable for applications demanding high efficiency and thermal performance.

Synchronous Rectification
DC-DC Converters
Motor Control