IPB029N06N3 G – INFINEON

Part Number:

IPB029N06N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel MOSFET, 60 V, 120 A, 2.9 mOhm, TO‑263‑3 Package

Datasheet:

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Product Details:

Overview

The IPB029N06N3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for high-efficiency power switching applications, offering a low on-state resistance of 2.9 mOhm. It features a voltage rating of 60 V and a continuous drain current of 120 A. The component is supplied in a TO-263-3 surface-mount package.

Key Features

N-Channel Enhancement Mode
60 V Drain-Source Voltage
120 A Continuous Drain Current
Low On-State Resistance (2.9 mOhm)

Applications

This MOSFET is commonly used in various power management circuits and switching regulators where efficient power conversion is required. Its low resistance minimizes power losses, making it suitable for demanding applications.

Synchronous Rectification
DC-DC Converters
Motor Control