IPW65R190E6FKSA1 – INFINEON
Part Number:
IPW65R190E6FKSA1
Manufacturer:
Date Code:
447
RoHS:
RoHS Compliant
MSL:
1
COO:
MALAYSIA
Description:
N-Channel MOSFET, 650V, 20.2A, 151W, PG-TO247-3-1, Through-Hole
Datasheet:
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Stock Quantity: 33
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.25 |
| 10+ | |
| 50+ | |
| 100+ |
33 in stock
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Product Details:
Overview
The IPW65R190E6FKSA1 is an N-Channel Power MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, offering a breakdown voltage of 650V and a continuous drain current of 20.2A. It features a power dissipation rating of 151W and is packaged in a PG-TO247-3-1 through-hole configuration.
Key Features
- N-Channel Enhancement Mode
- 650V Drain-Source Voltage
- 20.2A Continuous Drain Current
- 190mΩ On-State Resistance (RDS(on))
Applications
This MOSFET is typically used in power electronics circuits requiring efficient and reliable switching. Its characteristics make it suitable for a range of industrial and consumer applications.
- Power Factor Correction (PFC) circuits
- Switch Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
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