IPW65R190CFD7A – INFINEON

Electronic Components
 
Part Number:
IPW65R190CFD7A
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
GERMANY
 
 
Description:

N-Channel, 650 V, 14 A, 159 mOhm MOSFET, TO‑247 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPW65R190CFD7A is a discrete N-Channel MOSFET manufactured by Infineon. This power transistor is rated for a drain-source voltage of 650V and a continuous drain current of 14A. It features a typical on-state resistance (Rds(on)) of 159 mOhm. The device is packaged in a through-hole TO-247 housing.

Key Features

  • 650V Drain-Source Voltage (Vds)
  • 14A Continuous Drain Current (Id)
  • 159 mOhm On-State Resistance (Rds(on))
  • N-Channel Enhancement Mode
  • TO-247 Package

Applications

This MOSFET is typically utilized in power switching circuits and high-voltage applications requiring efficient energy conversion. Its characteristics make it suitable for use in various industrial and commercial electronic systems.

  • Switch-Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Motor Control
 
 
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