N-Channel, 650 V, 14 A, 159 mOhm MOSFET, TO‑247 Package
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The IPW65R190CFD7A is a discrete N-Channel MOSFET manufactured by Infineon. This power transistor is rated for a drain-source voltage of 650V and a continuous drain current of 14A. It features a typical on-state resistance (Rds(on)) of 159 mOhm. The device is packaged in a through-hole TO-247 housing.
This MOSFET is typically utilized in power switching circuits and high-voltage applications requiring efficient energy conversion. Its characteristics make it suitable for use in various industrial and commercial electronic systems.