IPW65R080CFD – INFINEON

Part Number:

IPW65R080CFD

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

650 V, 43.3 A, 72 mOhm N‑Channel MOSFET, TO‑247 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The IPW65R080CFD is a 650V N-Channel MOSFET manufactured by Infineon. This power transistor is designed for high-voltage switching applications, offering a drain-source voltage rating of 650 volts and a continuous drain current of 43.3 Amperes. It features a typical on-state resistance (Rds(on)) of 72 mOhms. The component is housed in a TO-247 package.

Key Features

650V Drain-Source Voltage (Vds)
43.3A Continuous Drain Current (Id)
72 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This MOSFET is typically utilized in power electronic circuits requiring efficient and reliable high-voltage switching. Its characteristics make it suitable for various industrial and commercial applications.

Switch Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC) circuits