650 V, 21 A N‑Channel MOSFET, 103 mOhm, TO‑247 Package
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The IPW65R115CFD7A is a 650V N-Channel MOSFET manufactured by Infineon. This power MOSFET features a maximum drain-source on-state resistance of 103 mOhms and a continuous drain current of 21A. It is designed for high-efficiency switching applications and is provided in a TO-247 package for effective thermal dissipation.
This MOSFET is suitable for use in power electronic circuits requiring efficient switching and low conduction losses. Its characteristics make it appropriate for various power conversion and control applications.