N‑Channel MOSFET, 600 V, 76 A, 37 mOhm, TO‑247 Package
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The IPW60R037P7 is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-voltage switching applications, offering a drain-source voltage rating of 600V and a continuous drain current of 76A. The device features a low on-state resistance (Rds(on)) of 37 mOhm, minimizing conduction losses. It is housed in a standard TO-247 package, facilitating efficient heat dissipation.
This MOSFET is commonly used in power electronic circuits requiring efficient and reliable high-voltage switching. Its characteristics make it suitable for various industrial and consumer applications where power efficiency is a key design consideration.