IPW60R037P7 – INFINEON

Electronic Components
 
Part Number:
IPW60R037P7
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

N‑Channel MOSFET, 600 V, 76 A, 37 mOhm, TO‑247 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPW60R037P7 is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-voltage switching applications, offering a drain-source voltage rating of 600V and a continuous drain current of 76A. The device features a low on-state resistance (Rds(on)) of 37 mOhm, minimizing conduction losses. It is housed in a standard TO-247 package, facilitating efficient heat dissipation.

Key Features

  • 600V Drain-Source Voltage (Vds)
  • 76A Continuous Drain Current (Id)
  • 37 mOhm On-State Resistance (Rds(on))
  • N-Channel Enhancement Mode

Applications

This MOSFET is commonly used in power electronic circuits requiring efficient and reliable high-voltage switching. Its characteristics make it suitable for various industrial and consumer applications where power efficiency is a key design consideration.

  • Switch-Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Motor control
 
 
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