IPT015N10NF2S – INFINEON

Electronic Components
 
Part Number:
IPT015N10NF2S
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
GERMANY
 
 
Description:

N-Channel MOSFET, 100 V, 315 A, 1.5 mOhm, TOLL (HSOF-8) Package

 
 
Datasheet:
 
 
Spotted a problem with product information? – let us know
ORDER NOW

Stock Quantity: 0

Contact us for volume pricing

  • Same day shipping if ordered before 14.00 GMT
  • 6 month warranty on all stock items
  • All stock held and shipped from our UK warehouse
  • Worldwide shipping available, contact us for a quotation
  • We can ship on your DHL or UPS account if required
  • Any import duties or taxes are the responsibility of the receiver
 
Product Details:

Overview

The IPT015N10NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-current switching applications, offering a drain-source voltage rating of 100V and a continuous drain current capability of 315A. It features a low drain-source on-resistance of 1.5 mOhm, minimizing conduction losses. The device is packaged in a TOLL (HSOF-8) surface-mount format.

Key Features

  • N-Channel Enhancement Mode
  • VDS: 100V
  • ID: 315A
  • RDS(on): 1.5 mΩ

Applications

This MOSFET is typically used in power management circuits and high-frequency switching topologies. Its low on-resistance and high current capacity make it suitable for demanding environments where efficiency is critical.

  • Synchronous Rectification
  • DC-DC Converters
  • Motor Control
 
 
Spotted a problem with product information? – let us know