IPT059N15N3 – INFINEON

Part Number:

IPT059N15N3

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N-Channel, 150 V, 155 A, 5.9 mOhm MOSFET, HSOF‑8 Package

Datasheet:

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Product Details:

Overview

The IPT059N15N3 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-efficiency switching applications, offering a drain-source voltage rating of 150V and a continuous drain current capability of 155A. It features a low on-state resistance of 5.9 mOhm. The component is supplied in a HSOF‑8 package.

Key Features

N-Channel Enhancement Mode
VDS: 150V
ID: 155A
RDS(on): 5.9 mOhm

Applications

This MOSFET is suited for power management circuits requiring efficient and rapid switching. Its characteristics make it suitable for various power electronic systems.

Synchronous Rectification
DC-DC Converters
Motor Control