IPT015N10N5 – INFINEON

Electronic Components
 
Part Number:
IPT015N10N5
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

N‑Channel MOSFET, 100 V, 300 A, 1.5 mOhm, HSOF‑8 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPT015N10N5 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-current switching applications, featuring a drain-source voltage rating of 100V and a continuous drain current capability of 300A. It exhibits a low on-state resistance of 1.5 mOhm. The component is housed in an HSOF-8 package.

Key Features

  • N-Channel Enhancement Mode
  • VDS: 100V
  • ID: 300A
  • RDS(on): 1.5 mΩ

Applications

This MOSFET is suitable for use in various power management and switching circuits. Its high current handling capacity and low on-resistance make it appropriate for demanding environments requiring efficient power conversion and control.

  • Synchronous Rectification
  • DC-DC Converters
  • Motor Control
 
 
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