N‑Channel MOSFET, 100 V, 300 A, 1.5 mOhm, HSOF‑8 Package
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The IPT015N10N5 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-current switching applications, featuring a drain-source voltage rating of 100V and a continuous drain current capability of 300A. It exhibits a low on-state resistance of 1.5 mOhm. The component is housed in an HSOF-8 package.
This MOSFET is suitable for use in various power management and switching circuits. Its high current handling capacity and low on-resistance make it appropriate for demanding environments requiring efficient power conversion and control.