IPT019N08N5 – INFINEON

Part Number:

IPT019N08N5

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N‑Channel, 80 V, 247 A, 1.6 mOhm MOSFET, HSOF‑8 Package

Datasheet:

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Product Details:

Overview

The IPT019N08N5 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-current switching applications, featuring a drain-source voltage of 80V and a continuous drain current of 247A. The device exhibits a low on-state resistance of 1.6 mOhm. It is supplied in a HSOF-8 package.

Key Features

N-Channel Enhancement Mode
V_DS: 80V
I_D: 247A
R_DS(on): 1.6 mOhm

Applications

This MOSFET is commonly used in power management circuits and high-frequency switching regulators. Its low on-resistance makes it suitable for applications requiring minimal power loss and efficient operation.

Synchronous Rectification
DC-DC Converters
Motor Control