IPT020N10N5 – INFINEON

Part Number:

IPT020N10N5

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

100 V, 260 A, 1.6 mOhm N‑Channel MOSFET, HSOF‑8 Package

Datasheet:

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Product Details:

Overview

The IPT020N10N5 is an N-Channel enhancement mode Power MOSFET manufactured by Infineon Technologies. This device is designed for high-efficiency switching applications. It features a voltage rating of 100V and a continuous drain current capability of 260A. The IPT020N10N5 exhibits a low on-state resistance of 1.6 mOhm and is supplied in an HSOF-8 package.

Key Features

100V Drain-Source Voltage
260A Continuous Drain Current
1.6 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for use in various power switching circuits and systems. Its low on-resistance contributes to reduced power losses and improved efficiency in these applications.

Synchronous Rectification
DC-DC Converters
Motor Control