IPB050N10NF2S – INFINEON

Part Number:

IPB050N10NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel, 100 V, 103 A MOSFET, 5.1 mOhm, TO‑263 Package

Datasheet:

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Product Details:

Overview

The IPB050N10NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 100V and a continuous drain current of 103A. The device exhibits a low on-state resistance of 5.1 mOhm, minimizing conduction losses. It is supplied in a TO-263 package suitable for surface mount assembly.

Key Features

N-Channel enhancement mode
100V Drain-Source Voltage
103A Continuous Drain Current
5.1 mOhm On-State Resistance

Applications

This MOSFET is commonly used in power management circuits and motor control systems. Its characteristics make it suitable for various industrial and commercial electronic devices where efficient power switching is needed.

Synchronous Rectification
DC-DC Converters
Motor Control