IPB040N08NF2S – INFINEON

Part Number:

IPB040N08NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N-Channel MOSFET, 80 V, 107 A, 4.0 mOhm, TO‑263 Package

Datasheet:

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Product Details:

Overview

The IPB040N08NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 80V and a continuous drain current of 107A. The device exhibits a low on-state resistance of 4.0 mOhm, minimizing conduction losses. It is supplied in a TO-263 package for surface mount assembly.

Key Features

N-Channel Enhancement Mode
80V Drain-Source Voltage (Vds)
107A Continuous Drain Current (Id)
4.0 mOhm On-State Resistance (Rds(on))
TO-263 Package

Applications

This MOSFET is commonly used in circuits where efficient power switching is essential. Its low on-resistance and high current capability make it suitable for various power control implementations.

Synchronous Rectification
DC-DC Converters
Motor Control