IPB035N08N3 G – INFINEON

Part Number:

IPB035N08N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N‑Channel MOSFET, 80 V, 100 A, 4 mOhm, TO‑263‑3 Package

Datasheet:

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Product Details:

Overview

The IPB035N08N3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 80V and a continuous drain current capability of 100A. The component is housed in a TO-263-3 surface-mount package.

Key Features

N-Channel Enhancement Mode
V_DS: 80V
I_D: 100A
R_DS(on): 4 mOhm (typical)

Applications

This MOSFET is suitable for a variety of power management and switching circuits. Its low on-resistance minimizes power losses, making it appropriate for high-efficiency designs.

Synchronous Rectification
DC-DC Converters
Motor Control