IPB020N10N5 – INFINEON

Part Number:

IPB020N10N5

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel, 100 V, 120 A, 2 mOhm MOSFET, TO‑263 Package

Datasheet:

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Product Details:

Overview

The IPB020N10N5 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 100V and a continuous drain current capability of 120A. The device exhibits a low on-state resistance of 2 mOhm, minimizing conduction losses. It is supplied in a TO-263 package, suitable for surface mounting.

Key Features

N-Channel Enhancement Mode
V_DS: 100V
I_D: 120A
R_DS(on): 2 mOhm
TO-263 Package

Applications

This MOSFET is commonly used in circuits demanding high current and voltage switching. Its low on-resistance makes it ideal for applications where efficiency is paramount.

Synchronous Rectification
DC-DC Converters
Motor Control