IPB013N06NF2S – INFINEON

Part Number:

IPB013N06NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N-Channel, 60 V, 198 A, 1.3 mOhm MOSFET, TO‑263 Package

Datasheet:

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Product Details:

Overview

The IPB013N06NF2S is an N-Channel enhancement mode MOSFET manufactured by INFINEON. This power transistor is designed for high-efficiency switching applications, offering a low on-state resistance of 1.3 mOhm. It features a drain-source voltage rating of 60V and a continuous drain current capability of 198A. The component is supplied in a TO-263 package for surface mount assembly.

Key Features

N-Channel Enhancement Mode
V_DS: 60V
I_D: 198A
R_DS(on): 1.3 mOhm

Applications

This MOSFET is commonly used in circuits requiring efficient power switching and control. Its low resistance minimizes power losses, making it suitable for various industrial and commercial applications.

Synchronous Rectification
DC-DC Converters
Motor Control