BFP650FE6327 – INFINEON
Stock Quantity: 1179
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.41 |
| 10+ | |
| 50+ | |
| 100+ |
1179 in stock
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- 6 month warranty on all stock items
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The Infineon BFP650FE6327 is a high-linearity, low-noise silicon germanium (SiGe) heterojunction bipolar transistor (HBT) optimized for high-frequency applications up to 45 GHz. It features a low noise figure (NF) of 0.75 dB at 2 GHz and a high gain of 20 dB at the same frequency, making it ideal for low-noise amplifiers (LNAs) in wireless communication systems. With a collector-emitter breakdown voltage of 3.6V, it offers robust performance. The BFP650FE6327 is supplied in a tiny leadless SOT343 surface-mount device (SMD) package, simplifying integration and minimizing parasitic inductance. Its operating temperature range spans –65°C to 150°C, ensuring reliable operation in harsh environments. Typical applications include GPS, WLAN, and mobile communication front-ends. It offers superior performance compared to standard silicon BJTs, particularly in terms of noise and gain at microwave frequencies. Its collector current is rated for 65mA.
