BFP640ESD H6327 – INFINEON

Part Number:

BFP640ESD H6327

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

NPN RF Transistor, 4.1 V, 50 mA, SOT‑343 Package

Datasheet:

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Product Details:

Overview

The BFP640ESD H6327 is an NPN bipolar RF transistor manufactured by Infineon Technologies. This transistor is designed for high-frequency applications, operating with a collector-emitter voltage of 4.1 V and a collector current of 50 mA. It is supplied in a compact SOT-343 package, making it suitable for space-constrained designs.

Key Features

NPN Silicon Germanium (SiGe) Technology
Collector-Emitter Voltage (Vceo): 4.1V
Collector Current (Ic): 50mA
Transition Frequency (fT): High

Applications

This RF transistor is typically used in various wireless communication systems and high-frequency circuits. Its characteristics make it suitable for applications requiring amplification and signal processing at radio frequencies.

Low Noise Amplifiers (LNAs)
Oscillators
Mixers