BFP640ESDH6327XTSA1 – INFINEON
Part Number:
BFP640ESDH6327XTSA1
Manufacturer:
Date Code:
1503
RoHS:
MSL:
COO:
CHINA
Description:
NPN RF Transistor, 4.7V, 50mA, 46GHz, 200mW, PG-SOT343-4-2.
Datasheet:
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Stock Quantity: 447
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.38 |
| 10+ | |
| 50+ | |
| 100+ |
447 in stock
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Product Details:
Overview
The BFP640ESDH6327XTSA1 is an NPN RF transistor manufactured by Infineon. This silicon germanium (SiGe) heterojunction bipolar transistor (HBT) is designed for high-frequency applications. It operates at a collector-emitter voltage of 4.7V and a collector current of 50mA, with a transition frequency of 46GHz. The device has a power dissipation rating of 200mW and is supplied in a PG-SOT343-4-2 package.
Key Features
- NPN Silicon Germanium (SiGe) HBT
- 46 GHz Transition Frequency
- 4.7V Collector-Emitter Voltage
- 200mW Power Dissipation
Applications
This RF transistor is suitable for use in various high-frequency circuits and systems. Its characteristics make it appropriate for deployment in communication and radar systems.
- Low Noise Amplifiers (LNAs)
- Oscillators
- Mixers
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