BFP650 H6327 – INFINEON

Part Number:

BFP650 H6327

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

NPN RF Transistor, 4 V, 150 mA, SOT343 Package

Datasheet:

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Product Details:

Overview

The BFP650 H6327 is an NPN bipolar junction transistor manufactured by Infineon Technologies. This RF transistor is designed for high-frequency applications requiring amplification and switching. It operates with a collector-emitter voltage of 4 V and a collector current of 150 mA. The BFP650 H6327 is supplied in a compact SOT343 package.

Key Features

NPN Silicon Germanium (SiGe) Technology
Collector-Emitter Voltage: 4 V
Collector Current: 150 mA
High Transition Frequency
Surface Mount SOT343 Package

Applications

The BFP650 H6327 transistor is typically used in radio frequency circuits for signal amplification and mixing. Its characteristics make it suitable for various wireless communication systems and high-frequency electronic devices.

Low Noise Amplifiers (LNA)
Oscillators
RF Mixers
Wireless Communication Systems