600 V, 109 A N‑Channel MOSFET, 15 mOhm, TO‑247‑3 Package
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The IPW60R017C7 is a discrete N-Channel MOSFET manufactured by INFINEON. This power transistor is designed for switching applications requiring high voltage and current handling capabilities. It features a breakdown voltage of 600V and a continuous drain current of 109A. The component is housed in a TO-247-3 package and offers a low on-state resistance of 15 mOhm.
This MOSFET is suitable for use in various power electronics circuits where efficient switching and high power density are critical. Its characteristics make it appropriate for demanding operational environments.