IPP032N06N3 G – INFINEON
Part Number:
IPP032N06N3 G
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N‑Channel MOSFET, 60 V, 120 A, 3.2 mOhm, TO‑220 Package
Datasheet:
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Product Details:
Overview
The IPP032N06N3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-efficiency switching applications, offering a drain-source voltage rating of 60V and a continuous drain current of 120A. It features a low on-state resistance (Rds(on)) of 3.2 mOhm, minimizing conduction losses. The component is housed in a standard TO-220 package, facilitating easy mounting and thermal management.
Key Features
- N-Channel Enhancement Mode
- Vds: 60V
- Ids: 120A
- Rds(on): 3.2 mOhm (at Vgs=10V)
Applications
This MOSFET is commonly used in power management circuits and switching regulators where efficiency and power density are critical. Its characteristics make it suitable for a range of applications requiring efficient power control and switching.
- DC-DC Converters
- Motor Control
- Synchronous Rectification
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