IPP076N15N5 – INFINEON

Electronic Components
 
Part Number:
IPP076N15N5
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

150 V, 112 A, 7.6 mOhm N‑Channel MOSFET, TO‑220‑3 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPP076N15N5 is an N-Channel enhancement mode MOSFET manufactured by Infineon. This power MOSFET is designed for high-efficiency switching applications, featuring a drain-source voltage rating of 150V and a continuous drain current of 112A. It exhibits a low on-state resistance of 7.6 mOhm. The component is supplied in a through-hole TO-220-3 package for effective thermal dissipation.

Key Features

  • 150V Drain-Source Voltage (Vds)
  • 112A Continuous Drain Current (Id)
  • 7.6 mOhm On-State Resistance (Rds(on))
  • N-Channel Enhancement Mode
  • TO-220-3 Package

Applications

This MOSFET is typically employed in power management circuits and switching regulators where efficiency and thermal performance are critical. Its characteristics make it suitable for various power electronic systems.

  • Synchronous Rectification
  • DC-DC Converters
  • Motor Control
 
 
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