IPP024N08NF2S – INFINEON

Part Number:

IPP024N08NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

GERMANY

Description:

N-Channel, 80 V, 182 A, 2.1 mOhm MOSFET, TO‑220 Package

Datasheet:

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Product Details:

Overview

The IPP024N08NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power handling. It features a drain-source voltage rating of 80V and a continuous drain current capability of 182A. The device exhibits a low on-state resistance of 2.1 mOhm. It is supplied in a standard TO-220 package for through-hole mounting.

Key Features

N-Channel Enhancement Mode
80V Drain-Source Voltage (Vds)
182A Continuous Drain Current (Id)
2.1 mOhm On-State Resistance (Rds(on))

Applications

This MOSFET is suitable for use in various power management and switching circuits. Its low on-resistance contributes to reduced power dissipation and improved efficiency in targeted systems.

Synchronous Rectification
DC-DC Converters
Motor Control