IPP040N08NF2S – INFINEON

Part Number:

IPP040N08NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

CHINA

Description:

N-Channel, 80 V, 115 A, 3.6 mOhm MOSFET, TO‑220 Package

Datasheet:

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Product Details:

Overview

The IPP040N08NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 80V and a continuous drain current capability of 115A. The component exhibits a low on-state resistance of 3.6 mOhm, minimizing conduction losses. It is packaged in a through-hole TO-220 housing.

Key Features

N-Channel Enhancement Mode
80V Drain-Source Voltage
115A Continuous Drain Current
Low On-State Resistance (3.6 mOhm)

Applications

This MOSFET is suitable for various power control and conversion circuits. Its characteristics make it appropriate for use in systems where efficient switching and low power dissipation are essential.

Synchronous Rectification
DC-DC Converters
Motor Control