IPP034NE7N3 G – INFINEON

Part Number:

IPP034NE7N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 75 V, 100 A, 3.4 mOhm, TO‑220‑3 Package

Datasheet:

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Product Details:

Overview

The IPP034NE7N3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-efficiency switching applications, featuring a drain-source voltage rating of 75V and a continuous drain current capability of 100A. It exhibits a low on-state resistance of 3.4 mOhm, minimizing conduction losses. The component is housed in a TO-220-3 package, facilitating straightforward mounting and thermal management.

Key Features

N-Channel Enhancement Mode
75V Drain-Source Voltage (Vds)
100A Continuous Drain Current (Id)
3.4 mOhm On-State Resistance (Rds(on))

Applications

This MOSFET is commonly used in power management circuits and switching regulators where efficient power conversion is required. Its characteristics make it suitable for a variety of industrial and commercial electronic devices.

Synchronous Rectification
DC-DC Converters
Motor Control