N-Channel MOSFET, 100 V, 315 A, 1.5 mOhm, TOLL (HSOF-8) Package
Stock Quantity: 0
The IPT015N10NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-current switching applications, offering a drain-source voltage rating of 100V and a continuous drain current capability of 315A. It features a low drain-source on-resistance of 1.5 mOhm, minimizing conduction losses. The device is packaged in a TOLL (HSOF-8) surface-mount format.
This MOSFET is typically used in power management circuits and high-frequency switching topologies. Its low on-resistance and high current capacity make it suitable for demanding environments where efficiency is critical.