SQS481ENW-T1-GE3 – VISHAY

Part Number:

SQS481ENW-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 30V, 75A, 0.0023Ω RDS(on), PowerPAK® SO-8.

Datasheet:

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Product Details:

Overview

The SQS481ENW-T1-GE3 is an N-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for switching and amplification applications, offering a drain-source voltage of 30V and a continuous drain current of 75A. It features a low on-state resistance (RDS(on)) of 0.0023Ω, contributing to efficient power management. The component is packaged in a PowerPAK® SO-8 for optimized thermal performance.

Key Features

N-Channel MOSFET Configuration
30V Drain-Source Voltage (Vds)
75A Continuous Drain Current (Id)
Low RDS(on) of 2.3 mΩ at Vgs=10V
PowerPAK® SO-8 Package

Applications

This N-Channel MOSFET is suitable for use in a variety of power control and switching circuits. Its low on-resistance makes it appropriate for applications where energy efficiency is a primary concern. The PowerPAK® SO-8 package allows for effective heat dissipation in demanding environments.

Synchronous Rectification
DC-DC Converters
Load Switching