SQS407ENW-T1_GE3 – VISHAY
Part Number:
SQS407ENW-T1_GE3
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
P-Channel MOSFET, 30 V, 16 A, 10.8 mOhm, PPAK1212-8W Package
Datasheet:
Spotted a problem with product information? – let us know
ORDER NOW
Stock Quantity: 0
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
Product Details:
Overview
The SQS407ENW-T1_GE3 is a P-Channel MOSFET manufactured by VISHAY. This component is designed for power switching applications, offering a drain-source voltage of 30V and a continuous drain current of 16A. It features a low on-state resistance of 10.8 mOhm and is housed in a compact PPAK1212-8W package for efficient thermal management.
Key Features
- P-Channel Enhancement Mode
- VDS: -30V
- ID: -16A
- RDS(on): 10.8 mΩ at VGS = -10V
Applications
This P-Channel MOSFET is commonly used in various power management circuits and load switching implementations. Its characteristics make it suitable for deployment in portable devices and other space-constrained applications.
- Load Switching
- Power Management Circuits
- DC-DC Conversion
Spotted a problem with product information? – let us know
