SQS401EN-T1-GE3 – VISHAY

Part Number:

SQS401EN-T1-GE3

Manufacturer:

VISHAY

Date Code:

14+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 20V, 4.5A, 0.045Ω Rds(on), PowerPAK SC-70. (9 words)

Datasheet:

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Product Details:

Overview

The SQS401EN-T1-GE3 is an N-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for switching and amplification applications requiring a low on-resistance. It features a drain-source voltage rating of 20V and a continuous drain current of 4.5A. The component is housed in a compact PowerPAK SC-70 surface-mount package.

Key Features

N-Channel Enhancement Mode
20V Drain-Source Voltage
4.5A Continuous Drain Current
0.045Ω On-Resistance (Rds(on))
PowerPAK SC-70 Package

Applications

This N-Channel MOSFET is suitable for various power management and load switching tasks. Its low on-resistance minimizes power loss, making it efficient in battery-powered devices and other sensitive circuits. The small form factor allows for high-density board designs.

Load Switching
DC-DC Conversion
Power Management Circuits