SQS460ENW-T1_GE3 – VISHAY

Part Number:

SQS460ENW-T1_GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 60 V, 8 A, 30 mOhm, PPAK1212-8W Package

Datasheet:

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Product Details:

Overview

The SQS460ENW-T1_GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications, offering a drain-source voltage of 60V and a continuous drain current of 8A. It features a typical on-state resistance of 30 mOhm and is housed in a PPAK1212-8W surface-mount package.

Key Features

N-Channel enhancement mode
VDS: 60 V
ID: 8 A
RDS(on): 30 mOhm (typical)

Applications

This MOSFET is suitable for use in diverse electronic circuits requiring efficient power management and control. Its characteristics make it appropriate for various industrial and consumer electronic products.

DC-DC converters
Load switching
Motor control circuits