SI3410DV-T1-E3 – VISHAY

 
Part Number:
SI3410DV-T1-E3
 
 
Manufacturer:
VISHAY
 
 
Date Code:
10
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
 
 
Description:

MOSFET, N-Channel, 30V, 6A, 0.045Ω, TSOP-6

 
 
Datasheet:
 
 
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Product Details:

Overview

The SI3410DV-T1-E3 is an N-Channel MOSFET manufactured by VISHAY. This transistor is designed for switching and amplification applications, offering a drain-source voltage of 30V and a continuous drain current of 6A. It features a low on-state resistance (Rds(on)) of 0.045Ω. The component is supplied in a TSOP-6 package for surface mount assembly.

Key Features

  • N-Channel MOSFET configuration
  • 30V Drain-Source Voltage (Vds)
  • 6A Continuous Drain Current (Id)
  • 0.045Ω On-State Resistance (Rds(on))
  • TSOP-6 Surface Mount Package

Applications

This MOSFET is commonly used in power management circuits and load switching applications due to its efficient switching characteristics and compact size. Its low on-resistance minimizes power loss, making it suitable for various electronic systems.

  • DC-DC Converters
  • Load Switching
  • Power Management Circuits
 
 
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