SI3443DV-T1-E3 – SILICONIX

Part Number:

SI3443DV-T1-E3

Manufacturer:

SILICONIX

Date Code:

RoHS:

MSL:

COO:

Description:

P‑Channel MOSFET, 20 V, 65 mOhm @ 4.5 V, TSOP‑6 Package

Datasheet:

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Product Details:

Overview

The SI3443DV-T1-E3 is a P-Channel enhancement mode MOSFET manufactured by SILICONIX. This transistor is designed for load switching and power management applications. It features a drain-source voltage rating of 20V and a maximum on-state resistance of 65 mOhm when the gate-source voltage is 4.5V. The component is supplied in a TSOP-6 surface mount package.

Key Features

P-Channel MOSFET configuration
20V Drain-Source Voltage (Vds)
65 mOhm On-State Resistance (Rds(on) @ 4.5V)
TSOP-6 Surface Mount Package

Applications

This P-Channel MOSFET is commonly used in various electronic circuits requiring efficient power control and switching. Its low on-state resistance minimizes power loss, making it suitable for battery-powered devices and other energy-sensitive applications.

Load Switching
Power Management Circuits
DC-DC Conversion