SI3410DV-T1-GE3 – VISHAY

Part Number:

SI3410DV-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 30 V, 7.5 A, 6‑Pin TSOP

Datasheet:

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Product Details:

Overview

The SI3410DV-T1-GE3 is a N-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for power switching applications, offering a drain-source voltage rating of 30V and a continuous drain current capability of 7.5A. It is supplied in a 6-Pin TSOP package, making it suitable for surface mount assembly.

Key Features

N-Channel Enhancement Mode
VDS: 30V
ID: 7.5A
RDS(on) (max): 0.028 Ohms @ VGS=10V

Applications

This MOSFET is commonly utilized in various power management and switching circuits. Its characteristics make it suitable for use in systems requiring efficient power control and low on-state resistance.

DC-DC Conversion
Load Switching
Power Management in Portable Devices