SI3493DDV-T1-GE3 – VISHAY

Part Number:

SI3493DDV-T1-GE3

Manufacturer:

VISHAY

Date Code:

Unknown

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 30V, 4.3A, 0.045Ω, PowerPAK® SC-75.

Datasheet:

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Product Details:

Overview

The SI3493DDV-T1-GE3 is an N-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for power switching applications requiring efficient performance. It features a drain-source voltage of 30V and a continuous drain current of 4.3A. The device exhibits a low on-state resistance of 0.045Ω, minimizing power losses. It comes in a PowerPAK® SC-75 surface-mount package.

Key Features

N-Channel MOSFET technology
30V Drain-Source Voltage (Vds)
4.3A Continuous Drain Current (Id)
Low On-Resistance: 0.045Ω (Rds(on))
PowerPAK® SC-75 Package

Applications

This MOSFET is suitable for diverse uses where efficient power control is needed. Its characteristics make it appropriate for implementation in various electronic systems.

Load Switching
DC-DC Conversion
Power Management Circuits