SI2333DDS-T1-GE3 – VISHAY

Electronic Components
 
Part Number:
SI2333DDS-T1-GE3
 
 
Manufacturer:
 
 
Date Code:
21
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
 
 
Description:

P-Channel MOSFET, 20V, -3.5A, 0.1Ω Rds(on), PowerPAK® SC-70.

 
 
Datasheet:
 
 
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Product Details:

Overview

The SI2333DDS-T1-GE3 is a P-Channel MOSFET manufactured by VISHAY. This component is designed for power switching applications requiring a voltage rating of 20V and a continuous drain current of -3.5A. It features a maximum on-state resistance (Rds(on)) of 0.1Ω and is housed in a compact PowerPAK® SC-70 package.

Key Features

  • P-Channel Enhancement Mode
  • 20V Drain-Source Voltage
  • -3.5A Continuous Drain Current
  • 0.1Ω On-State Resistance (VGS = -4.5V)

Applications

This P-Channel MOSFET is commonly utilized in various electronic circuits where efficient power control is needed. Its low on-resistance minimizes power dissipation, making it suitable for battery-powered devices and load switching applications.

  • Load Switching
  • DC-DC Conversion
  • Power Management Circuits
 
 
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