SI2301BDS-T1-E3 – VISHAY
Part Number:
SI2301BDS-T1-E3
Manufacturer:
Date Code:
0751
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
P-Channel MOSFET, -20 V, 0.08 Ohm, -2.2 A, SOT-23, 0.7 W
Datasheet:
Spotted a problem with product information? – let us know
ORDER NOW
Stock Quantity: 1188
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.56 |
| 10+ | |
| 50+ | |
| 100+ |
1188 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
Product Details:
Overview
The SI2301BDS-T1-E3 is a P-Channel enhancement mode MOSFET manufactured by VISHAY. This device is designed for load switching and amplification applications, offering a drain-source voltage rating of -20V and a continuous drain current of -2.2A. It features a low on-state resistance of 0.08 Ohm and is provided in a compact SOT-23 package, with a power dissipation of 0.7W.
Key Features
- P-Channel Enhancement Mode
- -20V Drain-Source Voltage
- 0.08 Ohm On-State Resistance
- -2.2A Continuous Drain Current
Applications
This P-Channel MOSFET is commonly utilized in various electronic circuits requiring efficient power control and switching. Its small size and electrical characteristics make it suitable for portable devices and space-constrained applications.
- Load Switching
- DC-DC Conversion
- Power Management Circuits
Spotted a problem with product information? – let us know
Related products
PART NUMBER
CATEGORY
MANUFACTURER
