SI2303BDS-T1-E3 – VISHAY

 
Part Number:
SI2303BDS-T1-E3
 
 
Manufacturer:
 
 
Date Code:
06+
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

P-Channel MOSFET, 30V, 1.49A, 700mW, SOT-23.

 
 
Datasheet:
 
 
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Product Details:

Overview

The SI2303BDS-T1-E3 is a P-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for power management and switching applications, offering a voltage rating of 30V and a continuous drain current of 1.49A. It is housed in a compact SOT-23 surface-mount package and has a power dissipation rating of 700mW.

Key Features

  • P-Channel enhancement mode
  • Voltage rating: 30V
  • Continuous drain current: 1.49A
  • Power dissipation: 700mW
  • SOT-23 package

Applications

This MOSFET is commonly used in various electronic circuits requiring efficient power control. Its characteristics make it suitable for use in portable devices and other space-constrained applications.

  • Load switching
  • DC-DC converters
  • Power management circuits
 
 
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